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| ETE - VP0645 OBSOL - VP0650 P-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information BVDSS / BVDGS -450V -500V RDS(ON) (max) 30 30 ID(ON) (min) -0.2A -0.2A Order Number / Package TO-39 VP0645N2 -- TO-92 -- VP0650N3 TO-220 -- VP0650N5 Die VP0645ND VP0650ND MIL visual screening available 7 Advanced DMOS Technology These enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex's well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, these devices are free from thermal runaway and thermally-induced secondary breakdown. Supertex's vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired. High Reliability Devices See pages 5-4 and 5-5 for MILITARY STANDARD Process Flows and Ordering Information. Features Free from secondary breakdown Low power drive requirement Ease of paralleling Low CISS and fast switching speeds Excellent thermal stability Integral Source-Drain diode High input impedance and high gain Complementary N- and P-channel devices 9 Package Options Applications Motor controls Converters Amplifiers Switches Power supply circuits Drivers (relays, hammers, solenoids, lamps, memories, displays, bipolar transistors, etc.) GD S Absolute Maximum Ratings Drain-to-Source Voltage Drain-to-Gate Voltage Gate-to-Source Voltage Operating and Storage Temperature Soldering Temperature* * Distance of 1.6 mm from case for 10 seconds. 7-245 BVDSS BVDGS 20V -55C to +150C 300C DGS TO-220 TAB: DRAIN TO-39 Case: DRAIN SGD TO-92 Note: See Package Outline section for dimensions. VP0645/VP0650 Thermal Characteristics Package TO-92 TO-39 TO-220 ID (continuous)* -0.1A -0.25A -0.25A ID (pulsed) -0.3A -0.5A -0.5A Power Dissipation @ TC = 25C 1W 6W 45W jc ja IDR* -0.1A -0.25A -0.25A IDRM -0.3A -0.5A -0.5A C/W 125 21 2.7 C/W 170 125 70 * ID (continuous) is limited by max rated Tj. Electrical Characteristics (@ 25C unless otherwise specified) Symbol BVDSS VGS(th) V GS(th) IGSS IDSS Parameter Drain-to-Source Breakdown Voltage Gate Threshold Voltage Change in VGS(th) with Temperature Gate Body Leakage Zero Gate Voltage Drain Current VP0650 VP0645 Min -500 -450 -2 -4 -4.8 -100 -10 -1 ID(ON) RDS(ON) RDS(ON) GFS CISS COSS CRSS td(ON) tr td(OFF) tf VSD trr ON-State Drain Current -200 Static Drain-to-Source ON-State Resistance Change in RDS(ON) with Temperature Forward Transconductance Input Capacitance Common Source Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Diode Forward Voltage Drop Reverse Recovery Time 300 50 125 95 50 10 160 75 20 10 10 20 15 -1.8 V ns VGS = 0V, ISD = -50mA VGS = 0V, ISD = -50mA ns VDD = -25V ID = -200mA RGEN = 25 pF VGS = 0V, VDS =- 25V f = 1 MHz -200 -700 27 22 30 0.75 %/C m V mV/C nA A mA mA Typ Max Unit V Conditions VGS = 0V, ID = -2mA VGS = VDS, ID = -2mA VGS = VDS, ID = -2mA VGS = 20V, VDS = 0V VGS = 0V, VDS = Max Rating VGS = 0V, VDS = 0.8 Max Rating TA = 125C VGS = -5V, VDS = -25V VGS = -10V, VDS = -25V VGS = -5V, ID = -100mA VGS = -10V, ID = -100mA VGS = -10V, ID = -100mA VDS = -25V, ID = -100mA Notes: 1. All D.C. parameters 100% tested at 25C unless otherwise stated. (Pulse test: 300s pulse, 2% duty cycle.) 2. All A.C. parameters sample tested. LETE - Switching Waveforms and Test Circuit OBSO - 0V 10% INPUT -10V PULSE GENERATOR Rgen 90% t(ON) t(OFF) tr td(OFF) tF INPUT td(ON) 0V 90% OUTPUT VDD 90% 10% 10% 7-246 D.U.T. OUTPUT RL VDD Typical Performance Curves Output Characteristics -1.0 ETE - OBSOL - -0.5 -0.4 VP0645/VP0650 Saturation Characteristics -0.8 VGS = -10V VGS = -10V ID (amperes) ID (amperes) -0.6 -8V -0.4 -6V -0.2 -4V 0 0 -10 -20 -30 -40 -50 -0.3 -6V -0.2 -0.1 -4V 0 0 -2 -4 -6 -8 -10 7 VDS (volts) Transconductance vs. Drain Current 0.5 50 TO-220 0.4 VDS (volts) Power Dissipation vs. Case Temperature VDS -25V VDS ==-25V TA= -55C 40 9 GFS (siemens) TA = 25C 0.2 PD (watts) 0.3 30 TA = 125C 0.1 20 10 TO-39 TO-92 0 0 -0.1 -0.2 -0.3 -0.4 -0.5 0 0 25 50 75 100 125 150 ID (amperes) Maximum Rated Safe Operating Area -1.0 TO-39 (pulsed) TO-220 (DC) TO-39 (DC) 1.0 TC (C) Thermal Response Characteristics TO-220 P D = 45W T C = 25C Thermal Resistance (normalized) 0.8 ID (amperes) -0.1 TO-92 (DC) 0.6 TO-39 P D = 6W T C = 25C 0.4 -0.01 0.2 TO-92 P D = 1W T C = 25C 0.01 0.1 1.0 10 T C = 25C -0.001 -1 -10 -100 -1000 0 0.001 VDS (volts) tp (seconds) 7-247 Typical Performance Curves BVDSS Variation with Temperature 1.1 LETE - - OBSO 50 40 VP0645/VP0650 On-Resistance vs. Drain Current VGS = -5V VGS = -10V BVDSS (normalized) RDS(ON) (ohms) 30 1.0 20 10 0.9 0 -50 0 50 100 150 0 -0.2 -0.4 -0.6 -0.8 -1.0 Tj (C) Transfer Characteristics -1.0 ID (amperes) V(th) and RDS Variation with Temperature 2.0 VDS = -25V -0.8 1.2 RDS(ON) @ -10V, -0.1A VGS(th) (normalized) 1.1 -0.6 TA = 25C -0.4 1.0 1.0 0.9 -0.2 TA = 150C 0.8 V(th) @ -2mA 0 0 0 -2 -4 -6 -8 -10 -50 0 50 100 150 VGS (volts) Capacitance vs. Drain-to-Source Voltage 200 -10 Tj (C) Gate Drive Dynamic Characteristics f = 1MHz -8 150 VDS = -10V VDS = -40V C (picofarads) VGS (volts) -6 100 CISS 250 pF -4 COSS 50 -2 90 pF CRSS 0 0 -10 -20 -30 -40 0 0 0.5 1.0 1.5 2.0 2.5 VDS (volts) QG (nanocoulombs) 7-248 RDS(ON) (normalized) TA = -55C ID (amperes) |
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